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近日,我国第四代半导体材料产业化迎来关键一步。杭州富加镓业科技有限公司(简称"富加镓业")联合中国科学院上海光机所的科研团队,在低成本、大尺寸、高品质氧化镓单晶制备技术上取得重要突破,解决了长期制约该材料产业化应用的核心难题。这一成果不仅标志着我国在氧化镓这一前沿半导体材料领域达到国际领先水平,更为其在新能源汽车、数据中心、智能电网等"新基建"领域的规模化应用扫清了关键的材料障碍。相关研究成果以"Realization of 4-Inch and Thick β-Ga₂O₃ ...
Homoepitaxial growth of Si-doped β-Ga2O3 films on semi-insulating (100) β-Ga2O3 substrates by metalorganic chemical vapor deposition (MOCVD) is studied in this work. By appropriately optimizing the growth conditions, an increasing diffusio ...