Tuning the Bandgaps of (AlxGa1−x)2O3 Alloyed Thin Films for High‐Performance
Ga2O3 is a promising semiconductor for deep ultraviolet optoelectronics,
because of its ultrawide bandgap of 4.85 eV. Here, the bandgap modulation of
(AlxGa1−x)2O3 thin films through varying Al contents is reported –and the
achievement of high-performance p ...