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杭州富加镓业科技有限公司(以下简称“富加镓业”)联合上海功成半导体科技有限公司(以下简称“功成半导体”),围绕第四代半导体氧化镓产业化核心技术开展 “材料-器件-应用” 全产业链协同攻关,目前已进入器件验证阶段。
Homoepitaxial growth of Si-doped β-Ga2O3 films on semi-insulating (100) β-Ga2O3 substrates by metalorganic chemical vapor deposition (MOCVD) is studied in this work. By appropriately optimizing the growth conditions, an increasing diffusio ...