Homoepitaxial growth of Si-doped β-Ga2O3 films on semi-insulating (100) β-Ga2O3 substrates by metalorganic chemical vapor deposition (MOCVD) is studied in this work. By appropriately optimizing the growth conditions, an increasing diffusion length of Ga adatom...

β-Ga2O3 is attracting considerable attention for applications in power electronics and deep ultraviolet (DUV) optoelectronics owing to the ultra-wide bandgap of 4.85 eV and amendable n-type conductivity. In this work, we report the achievement of Si-doped β-Ga...

Altering the n-type conductivity and optical properties of ultra-wide bandgap β-Ga2O3 by impurity doping has been a topic of research interest in the semiconductor field. Simultaneously, β-Ga2O3 with a monoclinic structure has exhibited interesting anisotropy....

Ga2O3 is a promising semiconductor for deep ultraviolet optoelectronics, because of its ultrawide bandgap of 4.85 eV. Here, the bandgap modulation of (AlxGa1−x)2O3 thin films through varying Al contents is reported –and the achievement of high-performance phot...

V impurities were intentionally introduced into β-Ga2O3 crystals as n-type dopants to improve the n-type conductivity of single-crystal substrates. A high-quality 0.20 mol% V-doped β-Ga2O3 single crystal was fabricated, and the effects of air annealing on the ...

The introduction of different elements into semiconductors to achieve conductivity control of n-type doping has considerable scientific significance and practical application prospects, which can further promote their extensive application in the field of elec...

Ga2O3 is emerging as a promising wide-band-gap semiconductor for highpower electronics and deep ultraviolet optoelectronics. Alloying Ga2O3 with In2O3 leads to the modulation of the band gaps and possible carrier confinement achieved at the heterointerface. In...